Power electronic devices are essential in various sectors, including household appliances, automotive electronics, and renewable energy. With the growing need for devices to operate at higher voltages, frequencies, and temperatures, wide bandgap semiconductors like SiC are becoming vital alternatives to traditional Si.
SiC offers superior physical properties but presents challenges in processing, particularly with dopant incorporation through ion implantation, which can create lattice defects.
Atom Probe Tomography (APT) is a valuable tool for analyzing dopant distribution and defects at the nanoscale, providing insights for improving next-generation semiconductor devices.
For more details, refer to the original application note:
Dopant Distribution within SiC Power Devices - Insights from atom probe tomography and transmission electron microscopy
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