Cross-sectional imaging of GaAs/AlGaAs VCSEL structure with InGaN quantum wells. Despite considerable thickness (8.5 microns), the depth resolution has not been compromised and 3.4 nm thick quantum wells can be fully resolved by Extreme Low Energy Secondary Ion Mass Spectrometry (EXLIE SIMS). The measurement also confirms the high quality of top and bottom distributed Bragg reflectors.
Recorded on CAMECA SC Ultra at Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Warsow, Poland. Image courtesy of Paweł Piotr Michałowski.