The IMS 7f-Auto is widely used for dopant monitoring in the semiconductor industry, and applied to different species and material systems.
Dynamic SIMS is one of the most efficient techniques for measuring trace concentrations of impurities in semiconductors.
EXtreme Low Impact Energy SIMS tools are used to monitor in-depth distributions of dopants.
Atom Probe Tomography has the unique capability to map the spatial distribution and chemical identity of dopants in ever smaller transistor devices.