The atomic level structural chemistry of Si doped (AlxGa1–x)2O3 was investigated using atom probe tomography. The doping level ranging from high 1018–mid-1021 cm–3 were studied. At high doping regime (≥ mid-1020 cm–3), Al segregations are observed within the bulk (AlxGa1–x)2O3 matrix. The observed Al segregations are attributed to the increased bond length difference between Al–O, Ga–O and Si–O at high doping level, as well as higher surface migration length of Al compared to that of Ga atoms.
Recorded on a CAMECA LEAP 5000 XR at the Departement of Materials Design and Innovation, State University of New York at Buffalo, USA. Image courtesy of Jith Sarker.