Gallium nitride (GaN) stands out among materials for power electronics due to its exceptional properties, enabling high breakdown voltage and low turn-on resistance in devices. Adequate ion implantation is key to obtain best performing GaN devices. The challenges of deep species diffusion within the implanted layer pose significant hurdles which can be effectively addressed by the superior depth profiling capabilities of Dynamic Secondary Ion Mass Spectrometry (D-SIMS). The technique provides high dynamic range and excellent detection limits even for the most challenging light elements.
In this recent study, D-SIMS was employed to measure impurities through depth profiling of various species including Mg and H, revealing their diffusion behavior in implanted GaN material.
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