Explore the superior capabilities of Dynamic SIMS for analyzing low-dose deep proton implants in industrially relevant silicon.
📢 Speaker: Orazio Samperi, University of Catania/STMicroelectronics
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Key learnings will include:
- The importance of proton implantation: Understand why proton implantation is a crucial method for modifying semiconductor substrates, particularly in the context of manufacturing power devices and engineering defects in wide-bandgap semiconductors.
- D-SIMS depth profiling: Review the pivotal role of Dynamic Secondary Ion Mass Spectrometry for analyzing low-dose deep proton implants in silicon, ensuring quality and performance of semiconductor devices.
- A new D-SIMS protocol: Learn about a new D-SIMS protocol enabling reliable depth profiling of H implants with concentrations in the order of 1E16cm-3, exceeding depths of 20 μm! The protocol was validated through repeatability tests and comparison with numerical simulations and Spreading Resistance Profiling electrical profiles.
About the Speaker
Orazio Samperi, holding a BSc in Chemistry and an MSc in Material Chemistry as of 2021, is currently advancing his studies in Material Science and Nanotechnologies through a PhD at the University of Catania, Italy. His research, in collaboration with STMicroelectronics, focuses on advanced ion implantation techniques for silicon and 4H-SiC based power electronics. His work mainly focused on the structural and electrical analysis of proton and various dopant implants in these materials. Between 2022 and 2024, Orazio enriched his research experience as a Guest researcher at the University of Oslo’s Centre for Material Science and Nanotechnologies, focusing on Dynamic SIMS, RBS, and electrical depth profiling techniques. He has authored two publications and presented his research at key 2023 conferences including ICSCRM, SIMS Europe, and E-MRS.