Understanding the nanoscale distribution and concentration of dopants is critical for optimizing the performance of advanced semiconductor devices like finFETs. These dopant variations, including clustering in the source/drain regions, can significantly influence electrical properties such as carrier mobility and leakage current, posing challenges to device efficiency and reliability.
Atom Probe Tomography (APT) has proven to be an invaluable tool for addressing these challenges. It enables precise 3D compositional mapping with subnanometer spatial resolution, providing unprecedented insights into material properties and manufacturing processes. For more details, refer to the original application note: Off-the-Shelf finFET Device Characterization Using APT.
In a recent study, APT analysis of Snapdragon X70 finFET devices revealed significant boron clustering within the SiGe source/drain regions, with localized concentrations reaching up to 10% in cluster centers. These findings highlight the potential for dopant clustering to adversely impact device performance, including increased leakage currents and reduced carrier efficiency. The study underscores the critical role of nanoscale characterization in understanding and mitigating such effects.
This breakthrough demonstrates how APT can unravel the complexities of dopant behavior in cutting-edge device architectures, offering essential data to drive innovation in semiconductor research and development.
Read the full application note to learn more!
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